Mott-Hubbard transition and Anderson localization: A generalized dynamical mean-field theory approach |
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Authors: | E Z Kuchinskii I A Nekrasov M V Sadovskii |
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Institution: | (1) Institute for Electrophysics, Russian Academy of Sciences, Yekaterinburg, 620016, Russia |
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Abstract: | The DOS, the dynamic (optical) conductivity, and the phase diagram of a strongly correlated and strongly disordered paramagnetic
Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT + Σ approximation). Strong correlations
are taken into account by the DMFT, and disorder is taken into account via an appropriate generalization of the self-consistent
theory of localization. The DMFT effective single-impurity problem is solved by a numerical renormalization group (NRG); we
consider the three-dimensional system with a semielliptic DOS. The correlated metal, Mott insulator, and correlated Anderson
insulator phases are identified via the evolution of the DOS and dynamic conductivity, demonstrating both the Mott-Hubbard
and Anderson metal-insulator transition and allowing the construction of the complete zero-temperature phase diagram of the
Anderson-Hubbard model. Rather unusual is the possibility of a disorder-induced Mott insulator-to-metal transition.
The text was submitted by the authors in English. |
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