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Threshold kinetic processes for t-C4F9I
Authors:Ja H. Lee  John W. Wilson  Therese Enderson  Donald H. Humes  Willard R. Weaver  Bagher M. Tabibi
Affiliation:NASA Langley Research Center, Hampton, Virginia 23665, USA
Abstract:A laser oscillator system was used to study the kinetics of t-C4F7I relative to n-C3F7I. Modeling shows that the rapid R + I1 recombination results in near steady state gain levels being achieved for t-C4F9I while the n-C3F7I exhibits strong transient behavior. The estimated recombination rate for t-C4F9I is much larger than the published value.
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