| 高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器 |
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| 引用本文： | 田慧军,刘巧莉,岳恒,胡安琪,郭霞. 高比探测率和高速石墨烯/n-GaAs复合结构的光电探测器[J]. 中国光学, 2021, 0(1): 206-212 |
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| 作者姓名： | 田慧军 刘巧莉 岳恒 胡安琪 郭霞 |
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| 作者单位： | 北京工业大学材料与制造学部;北京邮电大学电子工程学院 |
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| 基金项目： | 国家重点研发计划资助项目(No.2017YFF0104801);国家自然科学基金资助项目(No.61804012)。 |
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| 摘 要： | 混合结构的石墨烯/半导体光电晶体管因其超高的响应度而备受关注.然而,该类光电晶体管通过源-漏电极测试得到的比探测率(D．)容易受到1/f噪声的限制.本文制备了混合结构的石墨烯/GaAs光电探测器,通过源-栅电极测得D*大约为1.82X1011 Jones,与通过源-漏电极测量相比,D'提高了约500倍.这可归因于界面上...
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| 关 键 词： | 石墨烯 光二极管 比探测率 响应速度 |
Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed |
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| TIAN Hui-jun,LIU Qiao-li,YUE Heng,HU An-qi,GUO Xia. Hybrid graphene/n-GaAs photodiodes with high specific detectivity and high speed[J]. Chinese Optics, 2021, 0(1): 206-212 |
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| Authors: | TIAN Hui-jun LIU Qiao-li YUE Heng HU An-qi GUO Xia |
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| Affiliation: | (Faculty of Materials and Manufacturing,Beijing University of Technology,Beijing 100124,China;School of Electronic Engineering,Beijing University of Posts and Telecommunications,Beijing 100876,China) |
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| Abstract: | Hybrid graphene/semiconductor phototransistors have attracted great attention because of their ultrahigh responsivity.However,the specific detectivity(D*)for such hybrid phototransistors obtained from source-drain electrodes is assumed to be 1/f noise.In this paper,D*of~1.82×1011 Jones was achieved from source-gate electrodes.Compared with the same device which was measured from source-drain electrodes,D*was improved by~500 times.This could be attributed to the carrier trapping and detrapping processes having been screened by the Schottky barrier at the interface.The rise and decay times were 4 ms and 37 ms,respectively.The temporal response speed also correspondingly improved by~2 orders of magnitude.This work provides an alternative route toward light photodetectors with high specific detectivity and speed. |
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| Keywords: | graphene photodiode specific detectivity response speed |
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