Sensitivity analysis of ion implanted silicon wafers after rapid thermal annealing |
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Authors: | Youn Tae Kim Chi Hoon Jun Jong-Tae Baek Hyung Joun Yoo Sang-Koo Chung |
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Institution: | (1) Semiconductor Technology Division, Electronics and Telecommunications Research Institute, 305-600 Taejon, Korea;(2) Department of Electronics Engineering, Ajou University, 442-749 Suwon, Korea |
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Abstract: | In this study, we have investigated sensitivities of the ion implanted silicon wafers processed by rapid thermal annealing
(RTA), which can reveal the variation of sheet resistance as a function of annealing temperature as well as implantation parameters.
All the wafers were sequentially implanted by the arsenic or phosphorous implantations at 40, 80, and 100 keV with the dose
level of 1014 to 2 × 1016 ions/cm2. Rapid thermal annealing was carried out for 10 s by the infrared irradiation at a temperature between 850 and 1150°C in
the nitrogen ambient. The activated wafer was characterized by the measurements of the sheet resistance and its uniformity
mapping. The values of sensitivities are determined from the curve fitting of the experimental data to the fitting equation
of correlation between the sheet resistance and process variables. From the sensitivity values and the deviation of sheet
resistance, the optimum process conditions minimizing the effects of straggle in process parameters are obtained. As a result,
a strong dependence of the sensitivity on the process variables, especially annealing temperatures and dose levels is also
found. From the sensitivity analysis of the 10 s RTA process, the optimum values for the implant dose and annealing temperature
are found to be in the range of 1016 ions/cm2 and 1050-1100°C, respectively. The sensitivity analysis of sheet resistance will provide valuable data for accurate activation
process, offering a guideline for dose monitoring and calibration of ion implantation process. |
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Keywords: | Activation ion implantation rapid thermal annealing (RTA) sensitivity sheet resistance |
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