Multiple quantum well structures and high-power lasers of gaas- algaas grown by metalorganic vapor phase epitaxy (MOVPE)1 |
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| Authors: | Fred Roozeboom André Sikkema Laurens W Molenkamp |
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| Institution: | Philips Research Laboratories , P.O. Box 80, 000 5600, JA Eindhoven, The Netherlands |
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| Abstract: | GaAs/AlGaAs GRIN-SCH type multiple quantum well lasers with four wells of 11 nm GaAs, grown in an MOVPE chimney reactor, exhibit an output power as high as 110 mW/facet (CW, 30°C; 5 μm stripe) and 1.3 W/facet (pulsed, 30°C; 53 μm stripe) until catastrophic optical damage occurs. 2000 hours life tests conducted at 60°C and 15 mW CW show no noticeable degradation for the 5 μm stripe laser with a reflective coating on both facets. Raman spectroscopy on similar multiple quantum well structures with 65 GaAs wells is used to ascertain that the wells have minimum residual aluminum- content. |
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| Keywords: | Chaos Kerr effect nonlinear fiber resonators optical bistability |
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