MOVPE growth and characterization of GaInAs(P) on (001) InP using diethyltertiarybutylarsine (DEtBAs) and tertiarybutylphosphine (TBP) as the group-V sources

We report on low pressure MOVPE results of (GaIn)As grown with the arsenic precursor DEtBAs as well as (GaIn)(AsP) grown on InP using the precursor combinations DEtBAs/TBP, DEtBAs/PH₃ which we carefully compared with samples grown in the standard system (AsH₃/PH₃). Lattice matched (GaIn)As layers have been obtained at a growth temperature of 600°C, a V/III ratio of 3 and at a growth rate of 1 μm/h at a reactor pressure of 50 mbar. Changing the As precursor from AsH₃ to DEtBAs simultaneously alters the incorporation coefficient ratio k_Ga/k_In from 1.15 to 1. At room temperature n-type mobilities of 9060 cm²/V s have been achieved for (GaIn)As grown with DEtBAs at a V/III ratio of 2. Besides the excitonic luminescence at 802 meV a lower energy peak appears in the photoluminescence (PL) spectra at 753 meV (carbon-carbon donor-acceptor pair). The excitonic luminescence peak has a FWHM of about 9 meV. The (GaIn)(AsP) layers have been grown at a growth temperature of 625°C and V/III ratios of 15–25 with DEtBAs/TBP and about 60 with DEtBAs/PH₃. Layers grown with higher V/III ratios show an enhanced As content. However, considering the P incorporation we have observed a qualitative difference between the standard hydride system and systems using alternative group-V precursors. Even in the system DEtBAs/PH₃ the phosphorus incorporation is much higher than in the AsH₃/PH₃ system indicating the influence of vapor phase exchange reactions.