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| 硅通孔电镀铜填充工艺优化研究 | |
| 引用本文： | 李轶楠,蔡坚,王德君,王谦,魏体伟.硅通孔电镀铜填充工艺优化研究[J].电子工业专用设备,2012,41(10):6-10. |
| 作者姓名： | 李轶楠 蔡坚 王德君 王谦 魏体伟 |
| 作者单位： | 1. 大连理工大学电子科学与技术学院,辽宁大连,116024 2. 清华大学微电子学研究所,北京100084／清华信息科学与技术国家实验室（筹）,北京100084 3. 清华大学微电子学研究所,北京,100084 |
| 基金项目： | 国家科技重大项目(No.2009ZX02038) |
| 摘 要： | 研究了孔径40μm的硅通孔铜电镀填充工艺,通过改善电镀工艺条件使得孔径40μm、孔深180μm的硅通孔得以填充满。首先,在种子层覆盖以及电镀液相同条件下通过改变电镀电流密度,研究不同电流密度对于铜填充的影响,确定优化电流密度为1ASD(ASD:平均电流密度)。之后,在相同电流密度下,详细分析了超声清洗、去离子水冲洗以及真空预处理等电镀前处理工艺对铜填充的影响。实验表明,采用真空预处理方法能够有效的将硅通孔内气泡排出获得良好的铜填充。最终铜填充率在电流密度为1ASD、真空预处理条件下接近100%。 |
| 关 键 词： | 硅通孔 电镀 电流密度 真空 填充率 |
Optimizing Copper Filling Process For Through Silicon Via (TSV) |
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| LI Yi＇nan,CAI Jian,WANG Dejun,WANG Qian,WEI Tiwei.Optimizing Copper Filling Process For Through Silicon Via (TSV)[J].Equipment for Electronic Products Marufacturing,2012,41(10):6-10. | |
| Authors: | LI Yi＇nan CAI Jian WANG Dejun WANG Qian WEI Tiwei |
| Institution: | 1. School of Electronic Science and Technology, Dalian University of Technology, Dalian 116024, China; 2. Institute of Microelectronics ,Tsinghua University, Beijing 100084, China; 3. Tsinghua National Laboratory for Information Science and Technology, Beijing 100084, China) |
| Abstract: | Copper filling for 40 μm Through Silicon Via （TSV） had been investigated in this paper. Fully filled TSV with diameter of 40 μm, depth of 180μm had been achieved by fine-tuning parameters of the electroplating process. Effect of current density on copper filling was studied at the condition where seed layer deposition and plating solution were kept constant. The optimized current density was found to be 1 ASD. Then various pretreatment processes of electroplating, such as ultrasonic cleaning, deionized water flushing and vacuuming had been analyzed in detail with the same current density. Comparison experiments showed vacuuming pretreatment method resulted in good copper filling, because voids in silicon via could be removed effectively by this approach. By adopting vacuuming pretreatment and applying the current density of 1 ASD, copper filling ratio is close to 100%. |
| Keywords: | Through Silicon Via Electroplating Current Density Vacuum Filling Ratio |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |