Ab initio materials design for transparent-conducting-oxide-based new-functional materials |
| |
Authors: | H Katayama-Yoshida K Sato H Kizaki H Funashima I Hamada T Fukushima VA Dinh M Toyoda |
| |
Institution: | (1) Department of Computational Nano-materials Design and Department of Condensed Matter Physics, The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan |
| |
Abstract: | Based upon ab initio electronic structure calculations for delafossite CuAlO2 and ZnO, we report on the design of new-functional materials for transparent conducting oxides (TCO), such as (i) low-resistive
p-type ZnO and CuAlO2 by co-doping, (ii) high-efficiency thermoelectric power in CuAlO2 (ZT>3) by p-type doping, (iii) half-metallic ferromagnetism in transition-metal-impurity doped CuAlO2 and ZnO-based diluted magnetic semiconductors, and (iv) CaO, MgO, SrO and BaO based DMS without transition metal impurities.
We also discuss the implementation of the self-interaction correction to our materials design method.
PACS 61.72.Bb; 61.72.Jj; 71.15.Mb; 72.15.Jf; 82.75.-d |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|