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Phase controllable synthesis of unusual var epsilon-Ga2O3 single crystals with promising luminescence property
Authors:Suxiang Ge  Zhi Zheng  
Affiliation:aInstitute of Surface Micro and Nano Materials, Xuchang University, Xuchang 461000, PR China;bKey Laboratory of Pesticide and Chemical Biology of Ministry of Education, College of Chemistry, Central China Normal University, Wuhan 430079, PR China
Abstract:A new synthetic approach to unusual var epsilon-Ga2O3 with improved luminescence properties was developed by taking advantage of a microwave-assisted synthesis followed by calcinations at appropriate temperatures. Upon control of crystallinities of GaOOH precursors and the followed calcination temperature, the single crystalline var epsilon-Ga2O3 nanorods can be synthesized in a large scale. The resulting products were characterized by transmission electron microscopy, powder X-ray diffraction, and cathodoluminescence. The luminescence property of this unusual Ga2O3 phase was investigated for the first time.
Keywords:Semiconductors   Crystal growth   X-ray diffraction   Luminescence
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