Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers |
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Authors: | P Karbownik R P Sarzała |
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Institution: | (1) Institute of Physics, Technical University of Łódź, 219 Wólczańska Str., 93-005 Łódź, Poland |
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Abstract: | Room-temperature (RT) continuous-wave (CW) operation of the 405-nm ridge-waveguide (RW) InGaN/GaN quantum-well diode lasers
equipped with the n-type GaN substrate and two contacts on both sides of the structure has been investigated with the aid
of the comprehensive self-consistent simulation model. As expected, the mounting configuration (p-side up or down) has been
found to have a crucial impact on the diode laser performance. For the RT CW threshold operation of the otherwise identical
diode laser, the p-side up RW laser exhibits as high as nearly 68°C maximal active-region temperature increase whereas an
analogous increase for the p-side down laser was equal to only 24°C. Our simulation reveals that the lowest room-temperature
lasing threshold may be expected for relatively narrow and deep ridges. For the structure under consideration, the lowest
threshold current density of 5.75 kA/cm2 has been determined for the 2.2-μm ridge width and the 400-nm etching depth. Then, the active-region temperature increase
was as low as only 24 K over RT. For wider 5-μm ridge, this increase is twice higher. An impact of etching depth is more essential
for narrower ridges. Quite high values (between 120 and 140 K) of the characteristic parameter T0 convince very good thermal properties of the above laser. |
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Keywords: | 405-nm lasers InGaN/GaN diode laser simulation of a diode laser operation |
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