Laser-induced damage threshold in n-on-1 regime of Ta_2O_5 films at 532,800,and 1064 nm

Ta_2O5 films were prepared with conventional electron beam evaporation and annealed in O_2 at 673 K for 12h.Laser-induced damage thresholds(LIDTs)of the films were performed at 532 and 1064 nm in 1-on-1 regime firstly,and then were performed at 532,800,and 1064 nm in n-on-1 regime,respectively- The results showed that the LIDTs in n-on-1 regime were higher than that in 1-on-1 regime at 532 and 1064 nm.In addition,in n-on-1 regime,the LIDT increased with the increase of wavelength.Furthermore, both the optical property and LIDT of Ta_2O_5 films were influenced by annealing in O_2.