Effect of bismuth dopant on the dielectric properties of modified As2Se3 |
| |
| Authors: | R. A. Castro N. I. Anisimova V. A. Bordovsky G. I. Grabko |
| |
| Affiliation: | 1.Herzen State Pedagogical University of Russia,St. Petersburg,Russia |
| |
| Abstract: | A comparative analysis has been performed for the specific features of the dispersion of the components of the complex permittivity for pure and bismuth-doped thin films of amorphous arsenic triselenide. A correlation between the experimental data and theoretical calculations of similar characteristics obtained in previous studies has been found. The mechanisms of the effects observed have been discussed. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
