Effect of adsorption on the surface mobility of charge carriers in a semiconductor substrate

The effect of adsorption on the carrier mobility in the near-surface region of a semiconductor substrate has been investigated within the framework of the Schrieffer model. The dependence of the carrier surface mobility on the concentration of adatoms has been determined. The systems chosen for the study are the gases adsorbed on the surface of semiconductor oxides. Empirical estimates of the surface mobility, which are based on modification of conventional volume scattering mechanisms, have been proposed.