| GaP发光二极管中深能级对发光强度的影响研究 |
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| 引用本文： | 崔连森.GaP发光二极管中深能级对发光强度的影响研究[J].光学技术,2009,35(6). |
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| 作者姓名： | 崔连森 |
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| 作者单位： | 潍坊学院,信息与控制工程学院,山东,潍坊,261061 |
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| 摘 要： | 应用深能级瞬态谱(DLTS)技术,研究了GaP发光二极管中Zn-O对深能级,并计算出了其能级的激活能。GaP红色发光二极管经过γ射线长时间辐照后,其Zn-O对的浓度和发光管发光强度发生了变化。结果表明,经γ射线辐照后,GaP红色发光二极管中的Zn-O对的浓度增大,发光强度增强。它为提高GaP红色发光二极管的发光效率提供了一种新的方法。
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| 关 键 词： | 深能级 DLTS 发光强度 |
Study of the luminance intensity on Zn-O deep level in GaP LEDs |
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| CUI Lian-sen.Study of the luminance intensity on Zn-O deep level in GaP LEDs[J].Optical Technique,2009,35(6). |
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| Authors: | CUI Lian-sen |
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| Institution: | Weifang University;Weifang 261061;China |
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| Abstract: | The value and concentration of the Zn-O deep level in GaP light emitting diodes (LEDs) are studied by deep level transient spectroscopy (DLTS) technique. And the experiment of the influence on deep level and luminance intensity of the diodes radiated by γ-ray is done. The experiment result indicates that the Zn-O concentration and luminance intensity of the GaP LED are increased after it radiated by γ-ray. This is a new method for improving the luminance of the GaP LED. |
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| Keywords: | deep level DLTS luminance intensity |
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