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石墨上多晶硅薄膜的制备及择优取向的调控
引用本文:施辉伟,陈诺夫,黄添懋,尹志岗,汪宇,张汉,应杰.石墨上多晶硅薄膜的制备及择优取向的调控[J].微纳电子技术,2010,47(9).
作者姓名:施辉伟  陈诺夫  黄添懋  尹志岗  汪宇  张汉  应杰
作者单位:1. 中国科学院,半导体研究所,半导体材料科学重点实验室,北京,100083
2. 华北电力大学,可再生能源学院,北京,102206;浙江大学,硅材料国家重点实验室,杭州,310027
摘    要:利用磁控溅射在石墨衬底上制备了非晶硅薄膜,并使用快速热退火对薄膜进行了晶化处理。XRD分析表明,直接溅射沉积在石墨衬底上的硅薄膜经过快速热退火后具有高度的(220)择优取向。通过在硅薄膜和石墨衬底界面处引入一定厚度的ZnO中间层,晶化后的多晶硅薄膜择优取向实现了从(220)向(400)的转变,从而非常有利于将成熟的制绒工艺应用于该材料体系的电池制备过程中。对于择优取向的转变提出了解释,认为Si(100)面和ZnO(001)面晶格匹配是主要原因。喇曼分析表明ZnO中间层的引入提高了多晶硅薄膜的晶体质量。

关 键 词:多晶硅薄膜  石墨  快速热退火  氧化锌  择优取向

Fabrication of Polycrystalline Silicon Thin Films on Graphite Substrates and Control of the Preferred Orientation of Films
Shi Huiwei,Chen Nuofu,Huang Tianmao,Yin Zhigang,Wang Yu,Zhang Han,Ying Jie.Fabrication of Polycrystalline Silicon Thin Films on Graphite Substrates and Control of the Preferred Orientation of Films[J].Micronanoelectronic Technology,2010,47(9).
Authors:Shi Huiwei  Chen Nuofu  Huang Tianmao  Yin Zhigang  Wang Yu  Zhang Han  Ying Jie
Institution:Shi Huiwei1,Chen Nuofu2,3,Huang Tianmao1,Yin Zhigang1,Wang Yu1,Zhang Han1,Ying Jie1(1.Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,2.School of Renewable Energy,North China Electric Power University,Beijing 102206,3.State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China)
Abstract:The amorphous silicon thin films were deposited on graphite substrates by magnetron sputtering,and the films were recrystallized by rapid thermal annealing.XRD results indicate that the silicon thin film directly prepared on the graphite substrate has highly(220)preferred orientation after the rapid thermal annealing.A certain thickness of the ZnO intermediate layer was introduced between the silicon film and graphite substrate,which changed the preferred orientation of the films from(220)to(400).Thereby it...
Keywords:polycrystalline silicon thin film  graphite  rapid thermal annealing(RTA)  ZnO  preferred orientation  
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