自支撑聚酰亚胺/锆膜的制备及性能改善

 采用直流磁控溅射法制备自支撑锆(Zr)膜,采用二步法制备聚酰亚胺(PI)膜，在Zr膜表面沉积PI膜得到自支撑PI/Zr复合膜。均苯四甲酸酐(PMDA)和二甲基二苯醚(ODA)在二甲基乙酰胺(DMAC)中反应得到聚酰胺酸(PAA)，然后PAA高温亚胺化得到PI;PI成膜时采用提拉法成膜。经国家同步辐射实验室计量线站测定，实际测量结果与理论分析一致，PI膜的引入虽然会导致自支撑薄膜透过率有所下降，但在类镍-银软X射线13.9 nm波段PI(200 nm)/Zr(300 nm)和PI(200 nm)/Zr(400 nm)自支撑薄膜的透过率仍然分别达到14.9%和7.5%。

Preparation and characterization of free-standing polyimide/Zr film

Free-standing Zr film was prepared through direct-current magnetron sputtering. Polyimide (PI) film was prepared by a two-step process: After fully reaction between PMDA and ODA in DMAC, polyamic acid was produced; PI film was prepared when polyamic acid was thermally imidized. PI/Zr film was prepared through dip-coating PI film on Zr film. Based on the testing result from metrology beam-line station of National Synchrotron Radiation Center of University of Science and Technology of China, real transmittance fits with theoretical analysis fairly well. Although transmittance declines because of PI film, the Ni-like Ag soft X-ray transmittance of PI(200 nm)/Zr(300 nm) and PI(200 nm)/Zr(400 nm) films reaches 14.9% and 7.5% respectively at 13.9 nanometer.