Hole mobility enhancement in GaAs/p-Al Ga As QW-HEMT structures with (4 1 1)A super-flat interfaces grown by MBE

Be-doped GaAs/p-Al Ga As QW-HEMT structures with well width of and 50 nm were simultaneously grown on (4 1 1)A and (1 0 0) GaAs substrates by MBE. Be-doping concentration in the p-Al Ga As layer was , and the undoped Al Ga As spacer layer was 6 nm thick. Hole concentration was about for nm. Hole mobility at 10 K in the conventional (1 0 0) samples remained almost constant (about 20 000 cm (V s) for the current in the direction) with decreasing down to 7 nm and it rapidly decreased to 2760 cm (V s) at nm. On the other hand, in the (4 1 1)A samples, hole mobility (10 K) increased from 17 500 cm (V s) nm) to 33 900 cm (V s) nm) and dropped rapidly down to 4090 cm (V s) nm) for a current direction of . This significant enhancement of hole mobility in the (4 1 1)A samples is mainly due to (1) the significantly reduced interface roughness scattering of 2DHG when using the (4 1 1)A super-flat interfaces and (2) the reduced effective mass of holes in the narrow (4 1 1)A QWs ( –20 nm). Shubnikov–de Haas (SdH) measurements on the (4 1 1)A QW sample nm) confirmed the reduced effective mass (0.30 ) of holes.