| 硅离子注入对全耗尽SIMOX材料总剂量效应的影响 |
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| 引用本文： | 张帅,张正选,毕大炜,陈明,田浩,俞文杰,王茹,刘张李.硅离子注入对全耗尽SIMOX材料总剂量效应的影响[J].半导体学报,2009,30(9):093002-4. |
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| 作者姓名： | 张帅 张正选 毕大炜 陈明 田浩 俞文杰 王茹 刘张李 |
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| 作者单位： | State Key Laboratory of Functional Materials for Informatics;Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;Graduate University of the Chinese Academy of Sciences; |
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| 摘 要： | Total dose hardened fully-depleted SOI materials are fabricated on separation by implanted oxygen （SIMOX） materials by silicon ion implantation and annealing. The ID-VG characteristics of pseudo-MOS transistors pre- and post-irradiation are tested with ^60Co gamma rays. The chemical bonds and the structure of Si in the buried oxide are also studied by X-ray photoelectron spectroscopy and cross-sectional high-resolution transmission electron microscopy, respectively. The results show that Si nanocrystals in the buried oxide produced by ion implantation are efficient deep electron traps, which can significantly compensate positive charge buildup during irradiation. Si implantation can enhance the total-dose radiation tolerance of the fully-depleted SOI materials.
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| 关 键 词： | 氧离子注入 硅离子注入 总剂量辐射 全耗尽 植入 高分辨透射电子显微镜 X射线光电子能谱 SOI材料 |
| 修稿时间： | 5/10/2009 1:39:36 PM |
Effects of Si implantation on the total dose hardness of fully-depleted SIMOX wafers |
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| Zhang Shuai,Zhang Zhengxuan,Bi Dawei,Chen Ming,Tian Hao,Yu Wenjie,Wang Ru and Liu Zhangli.Effects of Si implantation on the total dose hardness of fully-depleted SIMOX wafers[J].Chinese Journal of Semiconductors,2009,30(9):093002-4. |
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| Authors: | Zhang Shuai Zhang Zhengxuan Bi Dawei Chen Ming Tian Hao Yu Wenjie Wang Ru and Liu Zhangli |
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| Institution: | State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; Graduate University of the Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | Total dose hardened fully-depleted SOI materials are fabricated on separation by implanted oxygen (SIMOX) materials by silicon ion implantation and annealing.The ID-VG characteristics of pseudo-MOS transistors pre-and post-irradiation are tested with 60Co gamma rays.The chemical bonds and the structure of Si in the buried oxide are also studied by X-ray photoelectron spectroscopy and cross-sectional high-resolution transmission elec-tron microscopy,respectively.The results show that Si nanocrystals in the b... |
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| Keywords: | SOI fully-depleted SIMOX total dose radiation Si nanocrystal |
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