Electrical activation of phosphorus-donors introduced in 6H-SiC by hot-implantation

Phosphorus ion (P⁺) implantations into 6H-SiC at room temperature (RT), 800 °C, and 1200 °C with mean concentrations of 1᎒¹⁸-5᎒¹⁹ /cm³ were performed to investigate the effects of hot-implantation on the electrical activation of P atoms. Improvement of the electrical activation of P atoms due to hot-implantation is found to depend on their implantation concentration, which can be divided into three regions. In the implantation with P in a low-concentration region (for example, 1᎒¹⁸ /cm³), no significant difference in the carrier concentrations among the samples implanted at RT and elevated temperatures is observed after annealing above 񫰸 °C. In a medium-concentration region, the carrier concentration increases with implantation temperature. When P ions were implanted in a high-concentration region (for example, 5᎒¹⁹ /cm³), the hot-implanted samples exhibit higher carrier concentration as compared with RT-implanted samples. Regarding hot-implantation, the carrier concentration in 800 °C-implanted samples is higher than that in the 1200 °C-implanted samples. This results can be interpreted as a degree of damage introduced by each implantation.