Electrical activation of phosphorus-donors introduced in 6H-SiC by hot-implantation |
| |
Authors: | T Ohshima K Abe H Itoh M Yoshikawa K Kojima I Nashiyama S Okada |
| |
Institution: | Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan (Fax: +81-27/346-9687, E-mail: ohshima@taka.jaeri.go.jp), JP
|
| |
Abstract: | Phosphorus ion (P+) implantations into 6H-SiC at room temperature (RT), 800 °C, and 1200 °C with mean concentrations of 1᎒18-5᎒19 /cm3 were performed to investigate the effects of hot-implantation on the electrical activation of P atoms. Improvement of the electrical activation of P atoms due to hot-implantation is found to depend on their implantation concentration, which can be divided into three regions. In the implantation with P in a low-concentration region (for example, 1᎒18 /cm3), no significant difference in the carrier concentrations among the samples implanted at RT and elevated temperatures is observed after annealing above °C. In a medium-concentration region, the carrier concentration increases with implantation temperature. When P ions were implanted in a high-concentration region (for example, 5᎒19 /cm3), the hot-implanted samples exhibit higher carrier concentration as compared with RT-implanted samples. Regarding hot-implantation, the carrier concentration in 800 °C-implanted samples is higher than that in the 1200 °C-implanted samples. This results can be interpreted as a degree of damage introduced by each implantation. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|