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Experimental elucidation of hydrogen local density of states in hydrogenated amorphous silicon
Affiliation:1. Department of Electronics and Communication Engineering, Regent Education and Research Foundation, Barrackpore, Kolkata 700121, India;2. Department of Electronics & Communication Engineering, National Institute of Technology Manipur, Langol, Imphal 795004, India;3. Department of Electronics & Communication Engineering, Swami Vivekananda Institute of Science & Technology, Dakshin Gobindapur, Kolkata 700145, India.;1. Sensors and Glass Physics Laboratory, Department of Physics, Guru Nanak Dev University, Amritsar 143005, Punjab, India;2. Department of Chemistry and Process & Recourse Engineering, University of Cantabria, Santander 39005, Spain;3. Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str. Blvd. 11, 1113 Sofia, Bulgaria;4. Department of Chemistry & Biochemistry, Florida State University, Tallahassee, FL 32306-4390, USA
Abstract:Ultraviolet and X-ray photoemission spectroscopies (UPS and XPS) are used to study the valence band in device quality hydrogenated amorphous silicon films (s-Si:H). Their results are combined to obtain estimated information about the hydrogen local density of states (HLDOS). The monohydride bonding configuration and the occurence of interhydride bonding between H atoms are confirmed by the experimental data.
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