Heterodiffusion of selenium in Bi2Te3 |
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| Affiliation: | 1. Rzhanov Institute of Semiconductor Physics SB RAS, 630090, Novosibirsk, 13 Lavrentyev Avenue, Russia;2. Novosibirsk State University, 630090, Novosibirsk, 2, Pirogov Street, Russia;3. Novosibirsk State Technical University, 630073, Novosibirsk, 20, K. Marxa pr, Russia;1. Department of Mechanical Engineering, Yasouj University, Yasouj 75914-353, Iran;2. Department of Mechanical Engineering, Persian Gulf University, Bushehr 7516913798, Iran;1. State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan, 410083, China;2. Department of Educational Science, Hunan First Normal University, Changsha, Hunan, 410205, China;3. School of Materials Science and Energy Engineering, Foshan University, Foshan, 528000, Guangdong, China |
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| Abstract: | We present results for the anisotropic diffusion coefficient of selenium, isoelectronic impurity, in Bi2Te3 along the solidus. The experimental conditions permitted us to obtain a definite stoichiometric deviation, and diffusion profiles were obtained by SIMS. |
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