The self-trapping of hydrogen in semiconductors |
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| Institution: | 1. Chemistry Department, State University of New York, 1400 Washington Ave., Albany, NY 12222, USA;2. Physics Department, State University of New York, 1400 Washington Ave., Albany, NY 12222, USA;3. AT&T Bell Laboratories, Murray Hill, NJ 07974, USA;4. Australian Nuclear Science and Technology Organization, Lucas Heights, NSW 2234, Australia;1. Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China;2. Department of Physics, Shanxi Datong University, Datong 037009, China;3. Nuclear Power Institute of China, Chengdu 610213, China;4. Department of Physics, Dalian Maritime University, Dalian 116026, China;1. School of Chemistry and Chemical Engineering, Guangxi University, Nanning, 530004, China;2. Lab of Advanced Materials, School of Materials Sciences and Engineering, Tsinghua University, Beijing 100084, China;3. Department of Mechanical Systems Engineering, Faculty of Engineering, Hiroshima Institute of Technology, 2-1-1 Miyake, Saeki-ku, Hiroshima 731-5193, Japan;1. Institute of Microelectronics, Tsinghua University, Beijing 100084, China;2. Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China;1. Department of Materials Science and Engineering, Nanchang University, Nanchang, 330047,China;2. Department of Physics, Nanchang University, Nanchang, 330047, China;3. Department of Physics, Jiangxi Normal University, Nanchang, 330022, China;4. Department of Physics, Jiangxi University of Technology, Nanchang, 330098, China;1. School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230027, China;2. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei, Anhui 230031, China;1. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan;2. National Institute for Fusion Science, 322-6, Oroshi-cho, Toki 509-5292, Japan;3. Department of Fusion Science, The Graduate University for Advanced Studies (SOKENDAI), 322-6 Oroshi-cho, Toki 509-5292, Japan;4. Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan |
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| Abstract: | Recent theoretical calculations are discussed which show that the minimum energy site for hydrogen in silicon is the bond-centered site, while a secondary minimum is at the anti-bonding site, it is noted that these results are strongly dependent on the relaxation experienced by the silicon atoms neighboring the hydrogen. Several experimental results are discussed, namely, the observed model of the hydrogen-passivated acceptor, etching of the silicon surface by hydrogen, the exponential depth dependence of the near-surface hydrogen diffusion profile, and related muonium results, and from these results it is argued that, in some instances at least, the BC-site is the lowest energy site for hydrogen. |
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