Localization effects in the YBa2Cu3-xCoxOy system |
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| Institution: | 1. Department of Physics, University of Science and Technology of China, Hefei, Anhui, PR China;2. Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui, PR China;3. Center of Condensed Matter and Radiation Physics CCAST (World Laboratory), Beijing, PR China;1. School of Chemistry and Chemical Engineering, Southwest University, Chongqing, 400715, China;2. Beijing Key Laboratory of Quality Evaluation Technology for Hygiene and Safety of Plastics, Beijing Technology and Business University, Beijing, 100048, China;3. College of Materials and Chemical Engineering, Chongqing University of Arts and Sciences, Chongqing, 402160, China;1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China;3. School of Electronic and Electrical Engineering, Chongqing University of Arts and Sciences, Chongqing 402160, China;1. Departamento de Matemáticas, Estadística y Computación, Universidad de Cantabria, Santander, 39005, Spain;2. Saint-Petersburg State University, St. Petersburg, 199034, Russia;3. Institute of Problems of Mechanical Engineering RAS, St. Petersburg, 199178, Russia;4. Departamento de Matemática Aplicada y Ciencias de la Computación, Universidad de Cantabria, Santander, 39005, Spain |
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| Abstract: | By measuring the X-ray diffraction, R(T) relation and Hall effect for YBa2Cu3-xCoxOy, a metal-seminconductor transition accompanied by an orthorhombic to tetragonal structural transition was found with the increase of impurity content. Simultaneously, the carrier concentration reduces sharply. The concept of electron localization is used to explain this phenomenon. |
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