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Preliminary results on tunnel junctions on YBCO bulk with an artificial barrier
Institution:1. Institute of Physics, Cze¸stochowa University of Technology, Ave. Armii Krajowej 19, 42-200 Cze¸stochowa, Poland;2. Institute of Physics, Jan D?ugosz University, Ave. Armii Krajowej 13/15, 42-200 Cze¸stochowa, Poland;3. School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, People’s Republic of China;1. L.V. Kirensky Institute of Physics, SB of RAS, Academgorodok 50/38, 660036 Krasnoyarsk, Russia;2. Siberian Federal University, 660074 Krasnoyarsk, Russia;3. Siberian State Aerospace University, 660014 Krasnoyarsk, Russia;4. International Laboratory of High Magnetic Fields and Low Temperatures, PL-53421 Wroclaw, Poland;5. P.N. Lebedev Physical Institute of RAS, 119991 Moscow, Russia;6. O.O. Galkin Donetsk Institute for Physics and Engineering, National Academy of Sciences of Ukraine, 83114 Donetsk, Ukraine;1. School of Physical Science and Technology, Southwest University, Chongqing 400715, China;2. Department of Applied Physics, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;3. College of Electronic and Information Engineering, Southwest University, Chongqing 400715, China
Abstract:YBCO-bulk based tunnel junctions employing a cadmium sulphide artificial barrier have been fabricated. Preliminary results on the role played by the CdS film thickness and different YBCO surface processing are discussed. dc Josephson effect has been detected in samples with a low tunneling resistance. The dependence of the critical current on the external magnetic field is reported.
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