Metastability and microstructural changes in hydrogenated amorphous silicon |
| |
| Affiliation: | 1. National Engineering Research Center of Light Alloy Net Forming, Shanghai Jiao Tong University, Shanghai 200240, China;2. State Key Laboratory for Mechanical Behavior of Materials, Xi''an Jiaotong University, Xi''an 710049, China;3. Advanced Photon Source, Argonne National Laboratory, IL 60439, USA;4. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China;5. School of Mechanical Engineering, Suzhou University of Science and Technology, Suzhou 215009, China;1. Department of Earth and Environmental Sciences, Tulane University, New Orleans, LA 70118, USA;2. Department of Ocean, Earth, and Atmospheric Sciences, Old Dominion University, Norfolk, VA 23529, USA;3. Department of Marine Sciences, University of North Carolina-Chapel Hill, Chapel Hill, NC 27599, USA;4. Department of Geological Sciences, University of Florida, Gainesville, FL 32611, USA |
| |
| Abstract: | The effects of prolonged illumination and subsequent thermal treatment, on the valence band density of states in hydrogenated amorphous silicon have been investigated. Significant reversible changes are observed upon light soaking and annealing sequences. A microscopic model consistent with the experimental observations is proposed for the light-induced generation and thermal recovery of defects in a-Si:H. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
