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Pressure and temperature dependence of the electric field gradient (EFG) in CdS
Authors:H R Blank  M Frank  J Heindl  M Kaltenhäuser  H Köchner  W Kreische  N Müller  S Poscher  R Sporer  T Wagner
Institution:(1) Physikalisches Institut, Universität Erlangen-Nürnberg, Erwin-Rommel-Strasse 1, W-8520 Erlangen, Germany
Abstract:Using the time differential perturbed angular correlation technique (TDPAC), the electric hyperfine interaction of111Cd in the II-VI-semiconductor CdS was investigated. The results of the temperature and pressure dependence of the electric field gradient (EFG) are discussed. The binding energyE b for111In at a Cd lattice site and a Cd vacancy (111InCd–VCd–pair) could be estimated to 340 meV±80 meV by means of an Arrhenius-Plot. The disappearance of the 79 MHz and 73 MHz frequencies under a pressure of about 30 kbar could be due to their vacancy character or to the beginning of the phase transition to rocksalt structure.
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