| Abstract: | We study the transient motion of the solidification front during the growth of semiconductor crystals in the horizontal Bridgman geometry. The calculation is based on a two-dimensional flow. We use finite elements which deform with the motion of the interface. The energy equation is coupled with the isothermal constraint of the interface in an implicit transient algorithm. Several examples show the oscillatory motion of the interface caused by the periodic flow of the melt, and they reveal the importance of the growth rate on the shape of the interface. |
