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Electron transport properties of three-dimensional topological insulators
Authors:Yong-qing Li  Ke-hui Wu  Jun-ren Shi  Xin-cheng Xie
Affiliation:1. Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; 2. International Center for Quantum Materials, Peking University, Beijing 100871, China
Abstract:We review experimental advances in the study of the electron transport in three-dimensional topological insulators with emphasis on experiments that attempted to identify the surface transport. Recent results on transport properties of topological insulator thin films will be discussed in the context of weak antilocalization and electron-electron interactions. Current status of gate-voltage control of the chemical potential in topological insulators will also be described.
Keywords:topological insulator  electron transport  localization  electron–electron interaction  spin–orbit coupling  
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