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Light emission from Si nanocrystals embedded in CaF2 epilayers on Si(1 1 1): Effect of rapid thermal annealing |
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| Authors: | Masahiro Watanabe Takeo Maruyama Soichiro Ikeda |
| Affiliation: | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan |
| Abstract: | Visible photoluminescence (PL) of nanocrystalline silicon (nc-Si) embedded in single crystal CaF2 formed on Si(1 1 1) has been studied and the influence of ex situ rapid thermal annealing (RTA) on the surface morphology and PL spectra has been studied. It has been found that the PL intensity and uniformity was improved by RTA with appropriate temperature and short annealing time. |
| Keywords: | Nanocrystalline silicon Epitaxial CaF2 Photoluminescence Rapid thermal annealing Co-evaporation |
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