(1) Institute for Advanced Materials Processing, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai 980-8577, Japan;(2) Tohoku Institute of Technology, 35-1, Yagiyama-kasumi-cho, Taihaku-ku, Sendai 982-8577, Japan
Abstract:
We demonstrate the single mode operation of a broad-area diode laser at 670 nm by means of an external cavity configuration using a diffraction grating. The output power of 150 mW is obtained with a spectral width of 40 MHz.