Growth of c‐axis‐oriented aluminum nitride thin films onto different substrates and buffer layers |
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| Authors: | T J A Mori R D Della Pace A M H de Andrade M A Corrêa P Stamenov L F Schelp L S Dorneles |
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| Institution: | 1. Departamento de Física, Universidade Federal de Santa Maria, Santa Maria, RS, Brazil;2. Instituto de Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS, Brazil;3. Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal, RN, Brazil;4. School of Physics and CRANN, Trinity College Dublin, Dublin 2, Ireland |
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| Abstract: | The growth of aluminum nitride thin films onto various substrates (glass, flexible polyimide, or silicon) and onto different buffer layers (Au, Nb, Cu, Ag, Co, Fe, NiFe, or IrMn) is reported. Samples grown on IrMn, Co, NiFe, Nb, or Au show smooth surfaces. This same smooth quality is observed in samples grown at a lower 200 °C temperature directly on glass, Si, or flexible polyimide. In applications where thin and smooth piezoelectric films are necessary, c‐axis‐oriented AlN can be grown onto a wide range of different surfaces: conducting, insulating, ferromagnetic, antiferromagnetic, or flexible. Copyright © 2014 John Wiley & Sons, Ltd. |
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| Keywords: | aluminum nitride nitrides piezoelectric synthetic multiferroics |
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