Enhancement of the ionic response of field effect transducers using porous silicon |
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Authors: | Zairi S Martelet C Jaffrezic-Renault N Vocanson F Lamartine R M'ghaı̈eth R Maaref H Gamoudi M |
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Institution: | IFOS laboratory, UMR CNRS 5621, 36 Ave Guy de Collongue, Ecole Centrale Lyon, BP 163, 69131 Ecully Cedex, France. |
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Abstract: | Oxidised porous silicon samples prepared from highly and weakly doped p-type silicon substrates, have been functionalised with calix4]arene (CA) molecules. They have been used for sodium detection as electrolyte/insulator/silicon (EIS) structures. An over Nernstian behaviour was observed and correlated with physical parameters of porous silicon samples (porosity, resistivity). A generalised Nernstian equation was proposed in order to describe this property. CA functionalised EIS structures based on porous silicon present higher lifetime compared to flat structures. |
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