| LEC-GaSb单晶生长技术研究 |
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| 引用本文： | 于凯,李璐杰,程红娟,张颖武. LEC-GaSb单晶生长技术研究[J]. 压电与声光, 2016, 38(5): 787-790 |
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| 作者姓名： | 于凯 李璐杰 程红娟 张颖武 |
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| 作者单位： | （中国电子科技集团公司第四十六研究所,天津 300220） |
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| 摘 要： | 采用液封直拉(LEC)法进行了生长GaSb单晶的实验研究,对比了等摩尔比的(LiCl+KCl)和氧化硼(B2O3)两种液封剂作用下的生长控制效果。通过模拟了解了保温罩是如何改善系统温场的梯度,进而分析了温场对成晶的影响。对晶体单晶区域的测试结果给出了晶体内部的位错分布特点,X线衍射(XRD)的测试结果显示该区域的晶体质量较好。
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| 关 键 词： | GaSb 晶体 液封直拉(LEC)法 温场 液封剂 |
Study on Liquid Encapsulated Czochralski GaSb Crystal Growth Technology |
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| YU Kai,LI Lujie,CHENG Hongjuan and ZHANG Yingwu. Study on Liquid Encapsulated Czochralski GaSb Crystal Growth Technology[J]. Piezoelectrics & Acoustooptics, 2016, 38(5): 787-790 |
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| Authors: | YU Kai LI Lujie CHENG Hongjuan ZHANG Yingwu |
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| Affiliation: | (46th Research Institute of China Electronics Technology Group Corporation, Tianjin 300220, China) |
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| Abstract: | The liquid encapsulated Czochralski (LEC) method is used to study the growth of GaSb single crystal, the effects of growth control under the two kinds of liquid sealing agent of equal molar ratio (LiCl+KCl) and B2O3 are also compared in this paper. It is clear that how the insulation cover improve the gradient of the system temperature field, and then analyze the impact of temperature field on the crystal growth. The test results from the single crystal region shows the distribution of dislocations within the crystal, XRD test results indicate the quality of the single region is also higher. |
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