| Abstract: | We study charge accumulation processes in silicon MIS structures with a dysprosium oxide dielectric layer, when the structure is exposed to UV radiation. The dependence of the trapped charge on the exposure time, the applied voltage, and the charge passing through the MIS structure is determined. It is shown that there are deep-seated capture centers for electrons and holes in the dysprosium oxide and these effects can be exploited in devices capable of optically recording and erasing information.Samarkand State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 99–105, July, 1994. |
