Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion |
| |
Institution: | 1. Department of Electronic Engineering, Xi’an University of Technology, Xi’an, Shaanxi 710048, China;2. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| |
Abstract: | AlGaInP/GaInP quantum well intermixing phenomena induced by Zn impurity diffusion at 540 °C were studied using room-temperature photoluminescence (PL) spectroscopy. As the diffusion time increased from 40 to 120 min, PL blue shift taken on the AlGaInP/GaInP quantum well regions increased from 36.3 to 171.6 meV. Moreover, when the diffusion time was equal to or above 60 min, it was observed firstly that a PL red shift occurred with a PL blue shift on the samples. After detailed analysis, it was found that the red-shift PL spectra were measured on the Ga0.51In0.49P buffer layer of the samples, and the mechanism of the PL red shift and the PL blue shift were studied qualitatively. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|