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Preparation of mixed arsenic/antimony chalcogenide glasses and some optical and thermo-physical properties
Institution:1. Technical Physics and Prototype Engineering Division, Bhabha Atomic Research Centre, Mumbai 400 085, India;2. Spectroscopy Division, Bhabha Atomic Research Centre, Mumbai 400 085, India;3. Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400 085, India;1. Department of Physics, Indian Institute of Science, Bangalore, India;2. Department of Material Science and Engineering, Lehigh University, Bethlehem, PA, USA;3. Alfred University, New York State College of Ceramics, Alfred, NY, USA;4. Corning Incorporated, Corning, NY, USA;5. Department of Instrumentation, Indian Institute of Science, Bangalore, India;6. Materials Research Centre, Indian Institute of Science, Bangalore, India
Abstract:The preparation of mixed glasses of As2S3−xSex (x = 0–3) and (1  y) · As2S3y · Sb2S3 (y = 0–1) has been carried out by an in situ pouring technique. X-ray diffraction (XRD) was used to confirm the glassy nature of the materials and monitor devitrification. Visible-IR transmission, photoluminescence, refractive index and micro-Raman were measured as a function of composition. Microhardness (MH) and thermal expansion coefficient (TEC) were also measured. Raman peaks in As2S3 and As2Se3 were observed around 338 cm−1 and 230 cm−1, respectively in this first composition series in which S was replaced by Se. When As was replaced by Sb, in the case of second composition series, the As2S3 related Raman peak became broader and shifted to lower wave number, reflecting some structural change/devitrification. MH increased (1.31–1.50 GPa) with Se and Sb content while the TEC was found to decrease (2.5–1.4 × 10−5/K). The progressive increase in the content of either Se or Sb in As2S3 is anticipated to modify bond lengths and bond angles. The combined effect of these structural modifications would change the local structure of the glass forming a more rigid glass network thereby increasing the hardness and decreasing TEC.
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