Formation of surface structures on amorphous chalcogenide films |
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| Affiliation: | 1. Institute of Physics, University of Debrecen, Egyetem ter 1, Debrecen 4010, Hungary;2. Institute of Nuclear Research of the HAS (ATOMKI), Bem ter 18/c, Debrecen 4026, Hungary;1. Department of Physics, Indian Institute of Science, Bangalore, India;2. Department of Material Science and Engineering, Lehigh University, Bethlehem, PA, USA;3. Alfred University, New York State College of Ceramics, Alfred, NY, USA;4. Corning Incorporated, Corning, NY, USA;5. Department of Instrumentation, Indian Institute of Science, Bangalore, India;6. Materials Research Centre, Indian Institute of Science, Bangalore, India |
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| Abstract: | The high spatial resolution of the localized structural transformations induced by different irradiations in amorphous chalcogenides, as well as the possibility of inducing volume expansion, promotes applications of these inorganic resists for optical recording, data storage and makes them attractive for nanolithography. This paper focuses on the fabrication of surface reliefs at submicrometer length scales in a direct, one-step process of recording by light or ion beam on Se layers or Se/As2S3 nanolayered films due to induced volume expansion. |
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