Fabrication of nano-gratings in arsenic sulphide films |
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| Affiliation: | 1. Department of Materials Science and Engineering, Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195, USA;2. Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, 532 10 Pardubice, Czech Republic;3. Sherman Fairchild Center for Solid-State Studies, Lehigh University, 16A Memorial Drive East, Bethlehem, PA 18015-3950, USA;1. Department of Physics, Indian Institute of Science, Bangalore, India;2. Department of Material Science and Engineering, Lehigh University, Bethlehem, PA, USA;3. Alfred University, New York State College of Ceramics, Alfred, NY, USA;4. Corning Incorporated, Corning, NY, USA;5. Department of Instrumentation, Indian Institute of Science, Bangalore, India;6. Materials Research Centre, Indian Institute of Science, Bangalore, India |
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| Abstract: | Chalcogenide glasses, generally soluble in alkaline solvents, become more resistant to etching in amine-based solvents after exposure to high energy electrons (30 keV). We have used this characteristic for fabricating structures that are suitable for nanolithography. Using a scanning electron microscope equipped with a lithography system, nano-gratings are written digitally with varying point spacing, line pitch, and electron dose. The spot size of the electron beam is ∼1 nm, but the finest structures that have been created in our arsenic sulphide films have lines with widths of 27 nm, separation of 7 nm, and heights from 80 to 250 nm. As the line pitch decreases, the best resolved spacing between the lines decreases until the lines blend into each other, much before the e-beam overlap. A discussion of the optimization of fabrication parameters is included. |
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