Temperature dependence of the bandgap width in FeIn2Se4 single crystals |
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Authors: | I. V. Bodnar’ S. A. Pavlyukovets A. V. Danilchik E. V. Lutsenko |
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Abstract: | We have used the Bridgman method to grow single crystals of the ternary compound FeIn2Se4 and we have determined their composition and structure. We measured the transmission spectra in the intrinsic absorption edge region in the temperature range 20–300 K. From the transmission spectra, we determined the bandgap width and plotted its temperature dependence. We show that the Eg(T) dependence has a shape typical for semiconductor compounds. |
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