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Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition |
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| Authors: | R Ohba K Shimomoto K Okamoto T Nakano H Fujioka M Oshima |
| Institution: | a Department of Applied Chemistry, The University of Tokyo, Hongo, Tokyo 113-8656, Japan b Institute of Industrial Science (IIS), The University of Tokyo, Komaba, Tokyo 153-8505, Japan c Kanagawa Academy of Science and Technology (KAST), Sakado, Kanagawa 213-0012, Japan d Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), Chiyoda-ku, Tokyo 102-0075, Japan |
| Abstract: | Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been found that the use of HfN (100) buffer layers allows us to grow cubic InN (100) films with an in-plane epitaxial relationship of 001]InN//001]HfN//001]MgO. X-ray diffraction and electron back-scattered diffraction measurements have revealed that the phase purity of the cubic InN films was as high as 99%, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD. |
| Keywords: | Cubic InN HfN Pulsed laser deposition |
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