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Diode-end-pumped passively mode-locked Nd:GGG laser with a semiconductor saturable mirror |
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| Authors: | LJ Qin DY Tang H Luo ZT Jia XT Tao |
| Institution: | a School of Environmental and Material Engineering, Yantai University, Yantai 264005, China b School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore c National Laboratory of Crystal Materials, Shandong University, Ji’nan 250100, China |
| Abstract: | We report on the passive mode-locking of a diode-end-pumped neodymium-doped gadolinium gallium garnet (Nd:GGG) crystal with a semiconductor saturable absorber mirror (SESAM). Continuous wave (CW) mode-locking was obtained. The mode-locked pulse duration was estimated to be ∼17.5 ps with a maximum average output power of 0.4 W. The mode-locked pulses have a repetition rate of 121.5 MHz. To our knowledge, this is the first demonstration of passive mode-locking of the diode pumped Nd:GGG lasers. |
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