|
|||||
|
|
Mechanism of phase conjugation via stimulated Brillouin scattering in narrow band gap semiconductors |
|
| Authors: | M Singh P Aghamkar |
| Institution: | a Department of Applied Sciences, P.D.M. College of Engineering, Bahadurgarh 124507, India b Department of Applied Physics, G.J. University of Science and Technology, Hisar 125001, India c Department of Physics, C.D.L. University, Sirsa 125055, India |
| Abstract: | We develop a theoretical model to study optical phase conjugation via stimulated Brillouin scattering (OPC-SBS) in narrow band gap transversely magnetized semiconductors. Threshold value of pump electric field and reflectivity of the image radiation for the onset of OPC-SBS are estimated. The analysis is applied to both cases viz. centrosymmetric (CS) and non-centrosymmetric (NCS) crystals. Numerical estimates made for n-type InSb crystal at liquid nitrogen temperature duly irradiated by nanosecond pulsed 10.6 μm CO2 laser shows that high OPC-SBS reflectivity (90%) can be achieved in NCS crystals at moderate pump electric fields if the crystal is used as an optical waveguide with relatively large interaction length (L = 5 mm) which proves its potential in practical applications such as fabrication of phase conjugate mirrors. |
| Keywords: | 42 65 &minus k 42 65 Dr 78 55 Cr |
| 本文献已被 ScienceDirect 等数据库收录！ | |