|
|||||
|
|
Diode-pumped intra-cavity doubled Nd:LuVO4 laser at 458 nm |
|
| Authors: | Kunna He Chunqing Gao Dehua Li HuaiJin Zhang |
| Institution: | a Department of Opto-Electronics, Beijing Institute of Technology, Beijing 100081, China b Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China c National Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, China |
| Abstract: | We have demonstrated a diode-pumped intra-cavity frequency doubling Nd:LuVO4 laser operating at 916 nm with a Z-folded cavity. A 10-mm long LBO crystal, cut for critical type I phase matching at 912 nm, is used for the experiment. A maximum output power of 330 mW at 458 nm has been achieved at pump power of 22 W. The optical-to-optical conversion efficiency and slope efficiency is 1.5% and 2.3%, respectively. The power instability at the maximum output power in 30 min is better than 3%. |
| Keywords: | 42 55 Xi 42 65 Ky |
| 本文献已被 ScienceDirect 等数据库收录！ | |