Heat treatment-induced bond layer diffusion and re-crystallization in copper carbon interface systems measured by modulated IR radiometry |
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Authors: | S Chotikaprakhan A Haj-Daoud E Neubauer J Pelzl B K Bein R Meckenstock |
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Institution: | (1) Solid State Spectroscopy, Ruhr University Bochum, 44780 Bochum, Germany;(2) Department of Physics, Kasetsart University, Bangkok, 10900, Thailand;(3) Palestine Academy for Science and Technology, 4577 Al-Bireh, Palestine;(4) Austrian Research Center Seibersdorf, 2444 Seibersdorf, Austria;(5) Department of Physics, University Duisburg-Essen, 47048 Duisburg, Germany |
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Abstract: | Copper-carbon interface systems with additional Mo bond
layers in the range of 25 nm to 200 nm have been analyzed with respect to
their effective thermal depth profiles before and after heat treatment using
modulated IR radiometry. Comparing the inverse calibrated modulated IR phase
lags before and after heat treatment, several effects can be identified: –
(1) The effusivity of the interface layer, which – due the contact
resistance between the two elements copper and carbon – is rather low
before heat treatment, increases considerably with heat treatment. – (2)
This effect is accompanied by an increase of the thermal diffusion time of
the interface layer, relying on the diffusion of Mo and Cu particles. – (3)
The sputter-deposited copper films, which before heat treatment can be
characterized as effective multi-layer structures, re-crystallize with heat
treatment and show modulated IR phases, which are characteristic for
thermally homogeneous thin films. – (4) The thermal diffusion times of the
Cu films decrease considerably with heat treatment due to increased thermal
diffusivities, and – (5) the thermal effusivities of the Cu films increase
with heat treatment. |
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