| Abstract: | Thin films of various thicknesses in the MIM structure have been prepared from the powder of SnO2/Sb2O3 mixed sample by the thermal evaporation technique in a vacuum of 10−5 Torr. Dielectric properties of SnO2/Sb2O3 mixed thin films have been studied with temperature starting from LNT to RT and above RT and frequency ranging from 100 Hz to 16 kHz. The activation energy for the migration of charge carriers in SnO2/Sb2O3 mixed thin films has been calculated and it is found to be 0.23 eV. The results thus obtained on dielectric properties of SnO2/Sb2O3 mixed thin films are presented and discussed. |
