| Abstract: | The electrical parameters of Zn-doped GaAs liquid phase epitaxial layers are determined in the temperature range from 77 to 300 K by Hall effect and resistivity measurements. An analysis of the experimental data yields an ionization energy of 30.4 meV for the Zn acceptor in GaAs in the dilute limit of acceptor concentration. For the Mott transition a critical hole concentration of about 6 · 1017 cm−3 is estimated. It is found that the temperature dependence of the electrical parameters is essentially influenced by band tail conduction effects at doping levels above the Mott transition. |
