Theoretical study of resistance against light-induced scattering in LiNbO3:M (M = Mg2+, Zn2+, In3+, Sc3+) crystals

Based on a multi-three-wave mixing model, we theoretically study the resistance against light-induced scattering in LiNbO(3):M (M=Mg(2+),Zn(2+),In(3+),Sc(3+)) crystals. We have simulated the intensity angular distribution of light-induced scatterings. We have also shown that the total light-induced scattering will be much less than 1% of the incident light intensity when the photovoltaic field E(ph) is less than 4.0x10(6)V/m .Phase gratings and signal beams can still be formed and amplified effectively in LiNbO(3):M crystals, with E(ph) less than 4.0x10(6)V/m .