| 纳米MOSFET迁移率解析模型 |
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| 引用本文： | 代月花,陈军宁,柯导明,孙家讹,胡媛.纳米MOSFET迁移率解析模型[J].物理学报,2006,55(11):6090-6094. |
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| 作者姓名： | 代月花 陈军宁 柯导明 孙家讹 胡媛 |
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| 作者单位： | 安徽大学电子科学与技术学院,合肥 230039 |
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| 摘 要： | 从玻尔兹曼方程出发，重新计算了纳米MOSFET沟道内的载流子所服从的分布函数，特别是考虑了纳米MOSFET横向电场和纵向电场之间的相互作用，并且以得到的非平衡状态下的分布函数为基础，考虑载流子寿命和速度的统计分布，给出了纳米MOSFET载流子迁移率的解析表达式.通过与数值模拟结果进行比较和分析，该迁移率解析模型形式简洁、物理概念清晰，且具有相当精度.
关键词：
玻尔兹曼方程
纳米MOSFET
迁移率
沟道有效电场
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| 关 键 词： | 玻尔兹曼方程 纳米MOSFET 迁移率 沟道有效电场 |
| 文章编号： | 1000-3290/2006/55(11)/6090-05 |
| 收稿时间： | 03 17 2006 12:00AM |
| 修稿时间： | 2006-03-172006-04-18 |
An analytical model of mobility in nano-scaled n-MOSFETs |
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| Dai Yue-Hua,Chen Jun-Ning,Ke Dao-Ming,Sun Jia-E,Hu Yuan.An analytical model of mobility in nano-scaled n-MOSFETs[J].Acta Physica Sinica,2006,55(11):6090-6094. |
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| Authors: | Dai Yue-Hua Chen Jun-Ning Ke Dao-Ming Sun Jia-E Hu Yuan |
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| Institution: | School of Electronic Science and Technology, Anhui University, Hefei 230039, China |
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| Abstract: | In this work, a method for calculating mobility of nano-scaled MOSFETs from the Boltzmann transport equation(BTE) is presented. Some approximations are assumed for the BTE in nano-scaled MOSFETs, and an improved distribution function of the carriers is obtained which is used to model the mobility of carriers. An analytical expression of carrier mobility is deduced considering the statistical distribution of carrier velocity and carrier life-span and taking into account especially the interaction between the longitudinal and the transverse fields. The reasonable agreement of the calculated results with simulation validated the new model, which is explicit, simple and physically well grounded. |
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| Keywords: | Boltzmann transport equation nano-scaled MOSFET mobility effective electrical field of channeling |
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