Microstructures of grain boundaries in (001)-oriented strontium bismuth tantalate thin films grown by pulsed laser deposition |
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Authors: | X Zhu T Zhu Z Liu N Ming |
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Institution: | (1) National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, P.R. China, CN;(2) CCAST (World Laboratory), P.O. Box 8730, Beijing 100080, P.R. China, CN |
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Abstract: | (001)-oriented strontium bismuth tantalate thin films have been grown on Pt/TiO2/SiO2/Si (100) substrates by pulsed laser deposition. The room-temperature current–electric field dependence of the films has been
investigated, which revealed a space-charge-limited conduction mechanism. The microstructures of grain boundaries and structural
defects in these films were also examined by transmission electron microscopy and high-resolution transmission electron microscopy,
respectively. The grains of the films deposited at 550 °C exhibited polyhedral morphologies, and the average grain size was
about 50 nm in length and 35 nm in width. At a small misorientation angle (8.2°) tilt boundary, a regular array of edge dislocations
with about 3-nm periodic distance was observed, and localized strain contrast near the dislocation cores was also observed.
The Burgers vector b of the edge dislocation was determined to be 110]. At a high misorientation angle (39.0°) tilt grain boundary lattice strain contrast associated with the distortion of
lattice planes was observed, and the mismatching lattice images occurred at about 2 nm along the boundary. The relationship
between microstructural defects at grain boundaries and leakage currents of these films is also discussed.
Received: 8 September 2000 / Accepted: 18 December 2000 / Published online: 28 February 2001 |
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Keywords: | PACS: 61 72 Ff 61 72 Mm 77 84 -s |
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