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Effect of vacuum heat treatment on the metal-semiconductor phase transition in thin vanadium dioxide films |
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| Authors: | R. A. Aliev V. N. Andreev V. A. Klimov V. M. Lebedev S. E. Nikitin E. I. Terukov E. B. Shadrin |
| Affiliation: | (1) Amirkhanov Institute of Physics, Dagestan Research Center, Russian Academy of Sciences, ul. 26 Bakinskikh Komissarov 94, Makhachkala, 367003 Dagestan, Russia;(2) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia;(3) Konstantinov Institute of Nuclear Physics, Russian Academy of Sciences, Gatchina, Leningrad Oblast, 188300, Russia |
| Abstract: | The effect of vacuum heat treatment of thin vanadium dioxide films on the parameters of the metal-semiconductor phase transition is studied. The results of heat treatment are compared with those obtained upon irradiation of the synthesized films by medium-energy electrons. The elemental composition of the films that is found by the Rutherford backscattering (RBS) method suggests that an observed change in the hysteresis loop of the films is associated with the reduction of the vanadium dioxide upon heating in a vacuum. |
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